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S-Parameter-Based Defect Localization for Ultrasonic Guided Wave SHM

Murmann Mixed-Signal Group, Department of Electrical Engineering, Stanford University, 330 Jane Stanford Way, Stanford, CA 94305, USA
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This paper is an extended version of our conference paper published at the 12th International Workshop on Structural Health Monitoring (IWSHM), Stanford, California, USA, 10–12 September 2019, which was selected for and invited to this special issue.
Aerospace 2020, 7(3), 33; https://doi.org/10.3390/aerospace7030033
Received: 28 February 2020 / Revised: 15 March 2020 / Accepted: 19 March 2020 / Published: 20 March 2020
(This article belongs to the Special Issue Selected Papers from IWSHM 2019)
In this work, an approach for enabling miniaturized, low-voltage hardware for active structural health monitoring (SHM) based on ultrasonic guided waves is investigated. The proposed technique relies on S-parameter measurements instead of time-domain pulsing and thereby trades off longer measurement times with lower actuation voltages for improved compatibility with dense complementary metal-oxide-semiconductor (CMOS) chip integration. To demonstrate the feasibility of this method, we present results showing the successful localization of defects in aluminum and carbon-fiber-reinforced polymer (CFRP) test structures using S-parameter measurements. The S-parameter measurements were made on benchtop vector network analyzers that actuate the piezoelectric transducers at output voltage amplitudes as low as 1.264 Vpp. View Full-Text
Keywords: structural health monitoring; ultrasonic guided waves; electronics; integrated circuits; signal processing; S-parameters; signal-to-noise ratio structural health monitoring; ultrasonic guided waves; electronics; integrated circuits; signal processing; S-parameters; signal-to-noise ratio
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Nyikayaramba, G.; Murmann, B. S-Parameter-Based Defect Localization for Ultrasonic Guided Wave SHM. Aerospace 2020, 7, 33.

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