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Journal: Electronics, 2020
Volume: 9
Number: 578
Article:
Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation
Authors:
by
Konstantinos Garidis, Ahmad Abedin, Ali Asadollahi, Per-Erik Hellström and Mikael Östling
Link:
https://www.mdpi.com/2079-9292/9/4/578
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