Next Article in Journal
Power Balance Method using Coupled Shunt Inductor and Multiple-Input Transformer for ISOP LLC Converter
Previous Article in Journal
A 2.5 Gbps, 10-Lane, Low-Power, LVDS Transceiver in 28 nm CMOS Technology
Previous Article in Special Issue
Improvement of the Approximation Accuracy of LED Radiation Patterns
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle

Heterogeneous Integration of GaN and BCD Technologies

1
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore 738406, Singapore
2
Engineering Product Development (EPD), Singapore University of Technology and Design, Singapore 487372, Singapore
3
Science & Math Cluster, Singapore University of Technology and Design, Singapore 487372, Singapore
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(3), 351; https://doi.org/10.3390/electronics8030351
Received: 7 January 2019 / Revised: 12 March 2019 / Accepted: 18 March 2019 / Published: 22 March 2019
(This article belongs to the Special Issue Latest Developments in LED Drivers)
  |  
PDF [5926 KB, uploaded 22 March 2019]
  |  

Abstract

Light-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fabrication process enables LEDs to not only provide illumination, but also find applications in biology and life science research. To enable the new generation of LED devices, methods to improve the energy efficiency for possible battery operation and integration level for miniaturized lighting devices should be explored. This paper presents the first case of the heterogeneous integration of gallium nitride (GaN) power devices, both GaN LED and GaN transistor, with bipolar CMOS DMOS (BCD) circuits that can achieve this. To validate this concept, an LED driver was designed, implemented and verified experimentally. It features an output electrical power of 1.36 W and compact size of 2.4 × 4.4 mm2. The designed fully integrated LED lighting device emits visible light at a wavelength of approximately 454 nm and can therefore be adopted for biology research and life science applications. View Full-Text
Keywords: Bipolar CMOS DMOS (BCD); complementary metal oxide semiconductor (CMOS); gallium nitride (GaN); integrated circuits (ICs); LED driver; life science; linear voltage regulator Bipolar CMOS DMOS (BCD); complementary metal oxide semiconductor (CMOS); gallium nitride (GaN); integrated circuits (ICs); LED driver; life science; linear voltage regulator
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Soh, M.Y.; Teo, T.H.; Selvaraj, S.L.; Peng, L.; Disney, D.; Yeo, K.S. Heterogeneous Integration of GaN and BCD Technologies. Electronics 2019, 8, 351.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top