Heterogeneous Integration of GaN and BCD Technologies
AbstractLight-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fabrication process enables LEDs to not only provide illumination, but also find applications in biology and life science research. To enable the new generation of LED devices, methods to improve the energy efficiency for possible battery operation and integration level for miniaturized lighting devices should be explored. This paper presents the first case of the heterogeneous integration of gallium nitride (GaN) power devices, both GaN LED and GaN transistor, with bipolar CMOS DMOS (BCD) circuits that can achieve this. To validate this concept, an LED driver was designed, implemented and verified experimentally. It features an output electrical power of 1.36 W and compact size of 2.4 × 4.4 mm2. The designed fully integrated LED lighting device emits visible light at a wavelength of approximately 454 nm and can therefore be adopted for biology research and life science applications. View Full-Text
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Soh, M.Y.; Teo, T.H.; Selvaraj, S.L.; Peng, L.; Disney, D.; Yeo, K.S. Heterogeneous Integration of GaN and BCD Technologies. Electronics 2019, 8, 351.
Soh MY, Teo TH, Selvaraj SL, Peng L, Disney D, Yeo KS. Heterogeneous Integration of GaN and BCD Technologies. Electronics. 2019; 8(3):351.Chicago/Turabian Style
Soh, Mei Y.; Teo, T. H.; Selvaraj, S. L.; Peng, Lulu; Disney, Don; Yeo, Kiat S. 2019. "Heterogeneous Integration of GaN and BCD Technologies." Electronics 8, no. 3: 351.
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