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Journal: Electronics, 2019
Volume: 8
Number: 266

Article: A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs
Authors: by Ruirui Dang, Lijie Yang, Zhihao Lv, Chunyi Song and Zhiwei Xu
Link: https://www.mdpi.com/2079-9292/8/3/266

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