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Journal: Electronics, 2019
Volume: 8
Number: 241
241
Article: Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
Authors: by Huolin Huang, Feiyu Li, Zhonghao Sun, Nan Sun, Feng Zhang, Yaqing Cao, Hui Zhang and Pengcheng Tao
Link: https://www.mdpi.com/2079-9292/8/2/241

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