Next Article in Journal
An Electromagnetic Analysis of Noise-Based Intrinsically Secure Communication in Wireless Systems
Previous Article in Journal
Novel Neural Control of Single-Phase Grid-Tied Multilevel Inverters for Better Harmonics Reduction
Article Menu
Issue 7 (July) cover image

Export Article

Open AccessReview
Electronics 2018, 7(7), 112;

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

School of Electro-Mechanical Engineering, Xidian University, Xian 710071, China
Author to whom correspondence should be addressed.
Received: 6 June 2018 / Revised: 30 June 2018 / Accepted: 4 July 2018 / Published: 13 July 2018
Full-Text   |   PDF [2239 KB, uploaded 13 July 2018]   |  


Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed. View Full-Text
Keywords: high-energy heavy ions; silicon interposer; TSV high-energy heavy ions; silicon interposer; TSV

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Tian, W.; Ma, T.; Liu, X. TSV Technology and High-Energy Heavy Ions Radiation Impact Review. Electronics 2018, 7, 112.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top