Article Versions Notes

Dogmus E, Kabouche R, Lepilliet S, Linge A, Zegaoui M, Ben-Ammar H, Chauvat M-P, Ruterana P, Gamarra P, Lacam C, et al. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics. 2016; 5(2):31. https://doi.org/10.3390/electronics5020031

Dogmus, Ezgi, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, and et al. 2016. "InAlGaN/GaN HEMTs at Cryogenic Temperatures" Electronics 5, no. 2: 31. https://doi.org/10.3390/electronics5020031

Dogmus, E., Kabouche, R., Lepilliet, S., Linge, A., Zegaoui, M., Ben-Ammar, H., Chauvat, M.-P., Ruterana, P., Gamarra, P., Lacam, C., Tordjman, M., & Medjdoub, F. (2016). InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics, 5(2), 31. https://doi.org/10.3390/electronics5020031