Order Article Reprints

Tzou A-J, Hsieh D-H, Chen S-H, Liao Y-K, Li Z-Y, Chang C-Y, Kuo H-C. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors. Electronics. 2016; 5(2):28. https://doi.org/10.3390/electronics5020028

Tzou, An-Jye, Dan-Hua Hsieh, Szu-Hung Chen, Yu-Kuang Liao, Zhen-Yu Li, Chun-Yen Chang, and Hao-Chung Kuo. 2016. "An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors" Electronics 5, no. 2: 28. https://doi.org/10.3390/electronics5020028

Tzou, A.-J., Hsieh, D.-H., Chen, S.-H., Liao, Y.-K., Li, Z.-Y., Chang, C.-Y., & Kuo, H.-C. (2016). An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors. Electronics, 5(2), 28. https://doi.org/10.3390/electronics5020028