Order Article Reprints

Belahsene S, Al Saqri NA, Jameel D, Mesli A, Martinez A, De Sanoit J, Ougazzaden A, Salvestrini JP, Ramdane A, Henini M. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics. 2015; 4(4):1090-1100. https://doi.org/10.3390/electronics4041090

Belahsene, Sofiane, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, Jacques De Sanoit, Abdallah Ougazzaden, Jean Paul Salvestrini, Abderrahim Ramdane, and Mohamed Henini. 2015. "Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation" Electronics 4, no. 4: 1090-1100. https://doi.org/10.3390/electronics4041090

Belahsene, S., Al Saqri, N. A., Jameel, D., Mesli, A., Martinez, A., De Sanoit, J., Ougazzaden, A., Salvestrini, J. P., Ramdane, A., & Henini, M. (2015). Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics, 4(4), 1090-1100. https://doi.org/10.3390/electronics4041090