Modica, L.; Zagni, N.; Cioni, M.; Cappellini, G.; Giorgino, G.; Iucolano, F.; Verzellesi, G.; Chini, A.
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation. Electronics 2025, 14, 4756.
https://doi.org/10.3390/electronics14234756
AMA Style
Modica L, Zagni N, Cioni M, Cappellini G, Giorgino G, Iucolano F, Verzellesi G, Chini A.
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation. Electronics. 2025; 14(23):4756.
https://doi.org/10.3390/electronics14234756
Chicago/Turabian Style
Modica, Lorenzo, Nicolò Zagni, Marcello Cioni, Giacomo Cappellini, Giovanni Giorgino, Ferdinando Iucolano, Giovanni Verzellesi, and Alessandro Chini.
2025. "Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation" Electronics 14, no. 23: 4756.
https://doi.org/10.3390/electronics14234756
APA Style
Modica, L., Zagni, N., Cioni, M., Cappellini, G., Giorgino, G., Iucolano, F., Verzellesi, G., & Chini, A.
(2025). Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation. Electronics, 14(23), 4756.
https://doi.org/10.3390/electronics14234756
