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Article

Initial/Last-State-Correlated SAR Control with Optimized Trajectory to Reduce Reverse Overshoot and Smooth Current Switching of Hybrid LDOs

1
State Key Laboratory of Advanced Power Transmission Technology, China Electric Power Research Institute Company Ltd., Beijing 100192, China
2
School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(10), 2051; https://doi.org/10.3390/electronics14102051
Submission received: 7 April 2025 / Revised: 12 May 2025 / Accepted: 15 May 2025 / Published: 18 May 2025

Abstract

:
Conventional successive approximation recursive (SAR) control hybrid low-dropout regulators (LDOs) have problems such as significant reverse overshoot and discontinuous current switching. Based on trajectory optimization in the phase plane, this paper presented initial/last-state-correlated SAR control to address the aforementioned issues. Firstly, the operating principles of the conventional SAR controller are elucidated, which is depicted by a finite state machine (FSM). Secondly, large reverse overshoot and discontinuous current switching of the SAR control hybrid LDO are analyzed through the phase plane trajectory. Then, the initial/last-state SAR control is proposed by FSM to optimize the trajectory, thereby reducing the reverse overshoot and smoothing current switching. Finally, a series of design challenges of the initial/last-state-correlated SAR control are discussed. Implemented at 1.11 mm × 0.567 mm in a 180 nm bipolar-CMOS-DMOS (BCD) process, under a 0.1 nF output capacitor, the 6-bit hybrid LDO in this paper achieved an output voltage overshoot of 76 mV and a transient time of 18.8 μs at a 152 mA load current change. The experimental result demonstrates the distinct dynamic response advantages of the initial/last-state SAR control.

1. Introduction

Modern MCUs and CPUs employ multiple power supply domains, most of which are regulated by local low-dropout regulators (LDOs) [1,2,3,4]. Conventional analog LDOs (ALDOs) fail to achieve performance enhancements within the context of the scaling CMOS process. Moreover, their performances, such as transient response and load range, deteriorate due to the decreasing supply voltage and intrinsic gain of the transistors [5,6,7,8]. In contrast, digital LDOs (DLDOs) overcome the above drawbacks of ALDOs. However, DLDOs are afflicted with low accuracy and limit cycle oscillation because of the discrete output current [3,5,9,10]. Hence, hybrid LDOs are proposed to address the issues of conventional ALDOs and DLDOs. They typically consist of a large current part and a small current part [2,5,11,12].
For a large current part, mainstream digital controls are categorized into linear search and successive approximation recursive (SAR) search, which are implemented by shift register and successive approximation register, respectively [5,11,13,14,15,16]. Comparing the SAR search control, the DLDO controlled by linear search has issues of large overshoot and long transient response time due to the slow searching speed, as shown in Figure 1a [13,15,17]. However, the DLDO controlled by SAR search provides a large current (I/2) during the first clock cycle for the small load step (I/64), which causes the large reverse overshoot, as shown in Figure 1b. This issue significantly impacts MCUs and CPUs during the majority of their operating time.
To solve the low accuracy and limit cycle oscillation, CLASS-D and ALDO are commonly used in the small current part. CLASS-D adjusts the output voltage by modifying the duty cycle of PWM. However, PWM control causes the output voltage ripple and forfeits the advantage of LDO [1,13,18]. The Schmitt trigger cannot adjust the threshold voltage in different applications, resulting in a fixed output voltage [19]. Therefore, the PWM generator adopts two comparators and RS latch. To eliminate the output voltage ripple, [5,20,21] proposed to use ALDO in the small current part of hybrid LDOs. However, ALDO is more difficult to operate with DLDO than CLASS-D due to the complex current switching logic and stability compensation.
Based on the preceding discussion, two issues exist in hybrid LDOs, namely reverse overshoot and current switching. This paper analyzed these issues in the phase plane, and proposed the initial/last-state-correlated SAR control based on an optimized trajectory. Comparing conventional SAR control, there are two improvements: (1) The proposed SAR control regulates the output current by the initial state before SAR search to reduce reverse overshoot. (2) The proposed SAR adjusts the last state and gate voltage of ALDO before ALDO operation to smooth current switching.
The rest of this paper is arranged as follows: Section 1 introduces operating principles of the conventional SAR controller in hybrid LDO. Section 3 analyzes reverse overshoot and current switching of the SAR controller in the phase plane. Then, initial/last-state-correlated SAR control is discussed based on the SAR controller-optimized trajectory. Section 4 describes the design difficulties of the initial/last-state-correlated SAR control. Section 5 shows the chip, simulation, and experiment results. Section 6 concludes this paper.

2. Operating Principles of a Conventional SAR Controller in Hybrid LDO

To optimize trajectory of a conventional SAR controller, its operating principles, including adjusting process and current switching, are explained in the following contents.

2.1. Adjusting Process of Conventional SAR Controller

The conventional SAR control hybrid LDO is shown in Figure 2, where B [5:0] are driving signals of a digital power transistor, and CLK is the clock signal. Its adjusting process is executed according to three indication signals P, Q [1], and Q [0], which signify the output voltage level and changing direction. The truth table of P, Q [1], and Q [0] is presented in Table 1, where VrefH and VrefL are the upper and lower thresholds, respectively.
According to the indication signals P, Q [1], and Q [0], all adjusting cases of the conventional SAR controller are shown in Figure 3. The conventional SAR controller adjusts output current according to Figure 3:
  • P = 1: The SAR controller continues to adjust the output current.
  • P = 0: This represents one of the conditions for DLDO stopping operation in advance.
  • Q [1:0] = 10/01: The SAR controller waits for several clock cycles.
  • Q [1:0] = 11: The SAR controller regulates the DLDO to increase the output current.
  • Q [1:0] = 00: The SAR controller regulates the DLDO to reduce the output current.
Furthermore, according to the above adjusting mechanism, the finite state machine (FSM) of the conventional SAR controller is presented in Figure 4, where the high level indicates power transistor turning-on. According to the FSM, the conventional SAR controller can be implemented by Verilog HDL.

2.2. Current Switching of Conventional SAR Controller with CLASS-D

In a conventional SAR controller with CLASS-D, to eliminate steady error of the output voltage, the current switching from DLDO to CLASS-D is executed after adjusting B [0] and P = 0. Among the typical control methods of CLASS-D, the simplest one is hysteresis control, which merely requires a hysteresis comparator, as shown in Figure 5. Comparing the limit cycle oscillation, the hysteresis control can reduce frequency of PWM, which is beneficial for the stability of the hybrid LDO.

3. Optimized Trajectory of Initial/Last-State Correlated SAR Controller with ALDO

To analyze reverse overshoot and smooth current switching in the SAR controller, the capacitance current IC and output voltage Vout are used to plot the phase plane. Furthermore, based on the SAR control, the initial/last-state-correlated SAR control is analyzed in the phase plane to reduce the reverse overshoot and smooth current switching.

3.1. Trajectory of the SAR Controller with CLASS-D

For PMOS power transistor in linear region, its drain/source current is given by
i d s = μ p C O X W L V i n V T H V I N V o u t 1 2 V I N V o u t 2 = μ p C O X W L V I N 1 2 V i n V T H + μ p C O X W L V T H 1 2 V o u t V o u t
where μp is the channel mobility, COX is the gate capacitance value per unit area, and W/L is the width length ratio. Vin and Vout are input and output voltages, and VTH is the threshold voltage.
In the DLDO, the capacitance current is given by
I C = N i d s V o u t R L , N = j B j 2 j
where RL is the load resistance value, and N is the number of turned-on power transistors.
Combing Equations (1) and (2), the capacitance current is derived as
I C = N I 0 + N μ p C O X W L V T H 1 2 V o u t 1 R L V o u t I 0 = μ p C O X W L V i n 1 2 V i n V T H
where I0 is equivalent current source of power transistor.
In circuit design, the load resistance value satisfies the following relationship:
R L < < 1 N μ p C O X W L V T H 1 2 V o u t
Based on Equations (3) and (4), the capacitance current is approximately expressed as
I C = N I 0 1 R L V o u t
To calculate the variations in output voltage and capacitance current in one digital clock cycle, combining Equation (5) and IC = CdVout/dt, the capacitance current and voltage are solved as
V o u t n + 1 N I 0 R L V o u t n N I 0 R L = i C n + 1 i C n = e T C L K R L C
where Vout(n) and IC(n) are finial values of the output voltage and capacitance current at the nth clock cycle, and Vout(n + 1) and IC(n + 1) are finial values of the output voltage and capacitance current at the (n + 1)th clock cycle. TCLK is the clock period.
An example is presented to illustrate the phase plane analysis. The parameters of this example are shown in Table 2. A total of 63 (6-bit) power transistors are utilized for the analysis, where N = 0, 1, 2, …, 63. According to Equation (5), trajectories of capacitance current and output voltage at different N are plotted in Figure 6.
When the load resistance value changes from RL1 = 100 Ω to RL2 = 3.5 Ω, trajectory of the capacitance current and output voltage satisfies l2 instead of l1 (O→A1), as shown in Figure 6. Then, after one clock cycle, the circuit state moves from A1 to A2 (A1→A2), which satisfies Equation (6). Finally, by regulating the output current, the trajectory returns to l3 and l4, resulting in the output voltage near the reference voltage (A2→O).
According to the operating principles of the SAR controller, when the load resistance value changes from RL1 = 100 Ω to RL2 = 3.5 Ω, the number of turn-on power transistors N is adjusted as follows: 2→63→31→47→55→59→57→58→57→58→57→58…, as shown in Figure 7. From Figure 7, hybrid LDO with the SAR controller exits the output voltage ripple.
To analyze the reverse overshoot, when the load resistance value changes from RL1 = 100 Ω to RL3 = 35 Ω, the number of turn-on power transistors N is adjusted as follows: 2→63→31→15→7→3→5→6→5→6→5→6…, as shown in Figure 8. From Figure 8, reverse overshoot of the SAR control hybrid LDO causes the long transient response at small load step.

3.2. Optimized Trajectory of the Initial/Last-State-Correlated SAR with ALDO

To reduce the reverse overshoot, eliminate the limit cycle oscillation, and ensure the smoothing current switching, the initial state and last state are introduced into the SAR control, and ALDO is used instead of CLASS-D in the small current part. The initial/last state-correlated SAR control hybrid LDO is presented in Figure 9, where CM is the compensating capacitor, RM1, RM2, …, RMK are compensating resistors, and A1 and A2 are the gate voltage adjusting signals of ALDO power transistor.
Staring position of the proposed SAR control is determined by the initial state before the load step and indication signals Q [1:0], as shown in Table 3. At the starting position, the output current is regulated to suppress the overshoot at large load step and reduce the reverse overshoot at small load step.
Ending position of the digital adjustment and the gate voltage of ALDO are determined by the last state after the digital adjustment and indication signals Q [1:0], as shown in Table 4. At the ending position, the output current is regulated to smooth the current switching, which ensures continuity of the output voltage. Based on Table 3 and Table 4, FSM of the initial/last-state-correlated SAR control is shown in Figure 10, which can be implemented by ASIC.
To plot trajectory of the initial/last-state-correlated SAR with ALDO, it is necessary to analyze voltage and current at each node of ALDO quantitatively, as shown in Figure 11.
For the gate node and output node, ignoring ditch length modulation effect, the following equations are satisfied according to KCL:
I C = C L d V o u t d t V g R g + C M d V g V M d t = g m V o u t V r e f C M d V g V M d t = V M V o u t R M V M V o u t R M + I A + I D = I C + V o u t R L
where CM and RM are the miller compensating capacitor and resistor, CL and RL are the output capacitor and load resistor, and Rg is the gate resistor. Vg, VM, and Vout are the gate voltage, the miller compensating network voltage, and the output voltage, while IC is current of the output capacitor.
Furthermore, to plot the trajectory of the ALDO, the differential Equation (7) is discretized, as shown in Table 5. In this paper, Rg = 10 MΩ, gm = 200 μS, CM = 4.4 pF. The current of MA is given by
V g n + 1 > 0.3 : I A n + 1 = 2.857 1.1 V g n + 1 0.8 2 mA V g n + 1 = 0.3 : I A n + 1 = 5 × 0.4 0.7 2.857 mA V g n + 1 < 0.3 : I A n + 1 = 5 × 0.7 V g n + 1 0.7 mA
According to Figure 11 and Equation (8), the adjusting process of the initial/last-state-correlated SAR with ALDO at RM = 100 KΩ is shown in Figure 12, when the load resistance value changes from RL1 = 100 Ω to RL2 = 3.5 Ω. The number of turn-on power transistors N is adjusted as follows: 2→32→63→47→55→59→57→58→57. From Figure 12, the initial/last-state-correlated SAR control hybrid LDO with ALDO eliminates the output voltage ripple.
To analyze the reverse overshoot, the adjusting process at RM = 100 KΩ is shown in Figure 13a when the load resistance value changes from RL1 = 100 Ω to RL3 = 35 Ω. N is adjusted as follows: 2→32→0→16→8→4→6→5.
To enhance the dynamic response and suppress oscillation of the output voltage during the operation of ALDO, RM changes from 100 KΩ to 1 MΩ, and the corresponding adjusting process is shown in Figure 13b. The value of the compensating resistor RM, which is crucial for achieving a fast dynamic response, varies with different loads. Therefore, RM is specifically designed based on the driving signals of DLDO, which can approximately reflect the load range. A detailed discussion to solve this issue is presented in Section 4, Part C.
According to Figure 7, Figure 8, Figure 12 and Figure 13, overshoots and response times of conventional SAR and proposed SAR controls are shown in Table 6. The proposed initial/last-state-correlated SAR control is capable of effectively reducing the reverse overshoot and response time at the small load step. Overshoots and response times of the proposed SAR control and conventional SAR control at the large load step are closed.

4. Design Difficulties of Optimized Trajectory Implementation in Hybrid LDO

To implement the initial/last-state-correlated SAR control hybrid LDO, there are some design difficulties according to Section 3 and Section 4:
  • The waiting cycle number and threshold width need to be precisely calculated to attain the specific stable state.
  • The current switching logic needs to be designed to smooth the output voltage response.
  • The compensation resistance RM needs to be accurately derived under different load conditions to achieve adaptive miller compensation.

4.1. Waiting Cycle Number and Threshold Width

For DLDO, the output voltage exists a series of stable states, as given by
V N = N I 0 R L
By the proposed SAR control adjustment, the output voltage is expected to attain the specific stable state, which is closest to, but not exceeding, the reference voltage, namely that Nspecific is the truncation of Vref/(I0RL). When the indication signals satisfy Q = 2′b01/10, the controller waits several cycles to judge whether the output voltage achieves the specific stable state. The judgment criterion is the relationship between the output voltage and threshold voltages. Therefore, the suitable waiting cycle number and threshold width is important to finish the judgment as fast as possible.
During the waiting cycles, tracks of Vout at different stable states are shown in Figure 14. In Figure 14, V4 is the specific stable state, and V1, V2, V3, V5, and V6 are other stable states. Track I, II, III, and IV are converged to V2, V3, V4, and V5, respectively.
  • Threshold width: After the proposed SAR control, the output voltage can achieve into the hysteresis region. Considering output current capacity of the ALDO, the hysteresis region can only contain a specific stable state. However, with the ending position setting logic, the stable state N = Nspecific + 1 can be adjusted to the specific stable state. Therefore, the threshold region can contain less than three stable states, and the threshold width satisfies Vw < 2I0RL, MIM.
  • Waiting cycle number: In Figure 14, the output voltage of Track II and Track III can converge to V3 and V4, with ALDO capable of adjusting the output voltage to the reference voltage. For all other tracks, Track I and Track IV are closest to Track II and Track III. Therefore, Track I and Track IV are most difficult to distinguish from Track II and Track III. For Track I and Track II, the output voltage of Track II needs to achieve V2 so as to distinguish Track I and Track II.
At the jth- (j = 0, 1, 2, 3, 4, 5) bit current adjustment, the output voltage of track II is solved as
V o u t t = V 0 V 3 e t R L C L + V 3
where V0 is the initial voltage at the waiting period.
According to Equation (10), the waiting time satisfies
V o u t t w = V 0 V 3 e t w R L C L + V 3 = V 2
Taking V3 = V2I0RL and V3 = V0 + 2jI0RL into Equation (11), the waiting time is solved as
t w = j ln 2 R L C L
If all bits require the waiting period to distinguish between different tracks, the total of waiting time in the 6-bit hybrid LDO is given by
t w , max = 15 ln 2 R L C L

4.2. Current Switching Logic

According to Figure 14, there are three cases of stable states contained at the hysteresis region: zero, one, and two stable states. When one or two stable states are at the hysteresis region, after the waiting time tw, if P = 0, DLDO holds and ALDO works; if P = 1, DLDO continues to adjust based on Q [0]. When zero stable state is at the hysteresis region, DLDO will wait to adjust the last bit, then DLDO stops and ALDO starts. Therefore, if the output voltage is at the hysteresis region after the waiting time tw, DLDO stops and ALDO starts in advance, which saves the adjusting time of other remnant bits.
When DLDO holds and ALDO works, DLDO and ALDO are adjusted based on the following principles to smooth the current switching: (1) Q = 01: DLDO holds the last state, and the gate voltage of ALDO is set to VDD; (2) Q = 10: last state of the DLDO subtracts 1, and the gate voltage of ALDO is set to 0. Therefore, the current switching logic of DLDO and ALDO is shown in Figure 15.

4.3. RM Design in the Adaptive Miller Compensation According to the Load Range

The transistor schematic and small signal model of ALDO are shown in Figure 16a,b, where gN1 and gA are transconductances of MN1 and MA, roA is the small signal resistor of MA, rdig is the small signal resistor of power transistors in the DLDO, gmP5, roP5, roP4, and roB5 are transconductance, small signal resistors of MP5, MP4, and MB5, respectively. Because gA, roA, and rdig change with the load current, it is necessary to apply adaptive Miller compensation at the different load range. In the hybrid LDO, driving signals of DLDO effectively reflect the load range. Therefore, driving signals can be used to control the resistance value RM of adaptive Miller compensation.
According to Figure 16b, the loop gain T(s) is derived as
T = v o v i = g N 1 r g g m A r e q × 1 + s C M R M 1 g m A 1 + s r e q C L + r g + R M C M + 1 + g m A r g r e q C M + s 2 r e q C L r g + R M C M 1 r e q = 1 r o A + 1 R L + 1 r d i g
Furthermore, DC gain Av0, zero ωz, poles ωp1, ωp2, and the phase margin PM of T are given by (ωp1 << ωp2, RM <<rg)
A v 0 = g N 1 r g g m A r e q ω z = 1 R M 1 g m A C M ω p 1 = 1 r e q C L + r g + R M C M + 1 + g m A r g r e q C M ω p 2 = 1 r g + R M C M + 1 r e q C L + 1 + g m A r g r g + R M C L P M = 180 ° + arctan ω c ω z arctan ω c ω p 1 arctan ω c ω p 2
Based on Equation (15), the phase margin of ALDO without the compensation at the all-load current is shown in Figure 17a. From Figure 17a, the minimum values of phase margin occur at Iload = NI0, and the phase margin at the small load current is below 45°. To increase the phase margin, the capacitance Miller compensation is adopted in the ALDO, with the phase margin shown in Figure 17b. However, the capacitance Miller compensation introduces a left-half-plane zero in the ALDO, resulting in an insignificant increase in the phase margin. Therefore, adaptive Miller compensation is used in the ALDO, with the phase margin shown in Figure 17c. The phase margin at the all-load current with adaptive Miller compensation at over 60°.
When the load current approaches NI0, the output current of ALDO is small. The gain of ALDO has a small effect on the output voltage accuracy. The static error is given by
Δ V o u t = V r e f V o u t = V r e f 1 + A v 0 I L N I 0 I L
According to Equation (16), the static error is shown in Figure 18. The static error of output voltage is less than 0.5 mV at the all-load range.

5. Layout and Experiment

A 6-bit initial/last-state-correlated SAR control hybrid LDO is designed with HHGrace 180 nm BCD process, which occupies a 1.11 × 0.567 mm2 die area. The layout of the chip is shown in Figure 19. The layout principally comprises power switches, driving modules, an initial/last-state-correlated SAR controller, and an amplifier with adaptive Miller compensation.
Figure 20 shows the relationship between the output voltage and the load current in the 6-bit initial/last-state-correlated SAR control hybrid LDO. The experiment result shows that static error of the output voltage is less than 12 mV at the 10 MHz and 100 MHz clock.
When testing the dynamic response of the output voltage under rapid load changes, a GaN transistor is employed to periodically switch between two load resistors. In Figure 21 and Figure 22, the load step signal is the gate control signal of the GaN transistor.
Figure 21 shows the output voltage response at the small load step. Figure 21a,b shows the output voltage response at the small load step and the large load current. When the load steps from 193 mA to 110 mA and from 110 mA to 193 mA, the output overshoot voltages are measured as 24 mV and 42 mV, and the response time are 6.3 μs and 10 μs, respectively. Figure 21c,d shows the output voltage response at the small load step and the small load current. When the load steps from 96 mA to 13 mA and from 13 mA to 96 mA, the output overshoot voltages are measured as 28 mV and 64 mV, and the response time are 7 μs and 15.2 μs, respectively.
Figure 22 shows the output voltage response at the large load step. When the load steps from 26 mA to 178 mA and from 178 mA to 26 mA, the output overshoot voltages are measured as 28 mV and 76 mV, and the response time are 18.8 μs and 17 μs, respectively.
Table 7 shows the performance comparison of initial/last-state-correlated SAR control hybrid LDO and other hybrid LDO. At 0.1 nF output capacitor, the overshoot voltage of initial/last-state-correlated SAR control hybrid LDO achieves 76 mV@152 mA, which is better than the SAR search and linear search.

6. Conclusions

This study proposed an initial/last-state-correlated SAR control strategy for hybrid LDOs, addressing the critical issues of reverse overshoot and discontinuous current switching in conventional SAR-controlled designs. The core innovations include the following: (1) Pre-setting the initial state via a finite state machine (FSM) to regulate the starting output current based on the pre-load state, which avoids the large reverse overshoot caused by excessive first-cycle current injection in a traditional SAR control. (2) Adjusting the last state and ALDO gate voltage to ensure smooth current switching between the DLDO and ALDO parts, eliminating the output voltage ripple of CLASS-D control. Experimental results show that the 6-bit hybrid LDO achieves only 76 mV output overshoot and 18.8 μs transient response under a 152 mA load change with 0.1 nF output capacitance, demonstrating superior dynamic performance. This study also discussed design challenges such as waiting cycles, threshold width, current switching logic, and adaptive Miller compensation, providing a novel framework for high-integration power management ICs. Future work may focus on optimizing compensation networks and extending the strategy to multi-power domain systems.

Author Contributions

Methodology, Y.W. and R.M.; Validation, R.M.; Formal analysis, C.L.; Investigation, H.X.; Resources, H.X.; Data curation, J.K. and Z.G.; Writing—original draft, Y.W.; Writing—review & editing, Y.W. and R.M.; Visualization, S.Z.; Supervision, J.F.; Project administration, J.K. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by the National Key Research and Development Program of China, grant number 2021YFB2401603.

Data Availability Statement

The original contributions presented in this study are included in the article. Further inquiries can be directed to the corresponding author.

Conflicts of Interest

Authors Yinyu Wang, Jinkun Ke, Hangyu Xu, Zhaoliang Guan and Jingbo Feng were employed by the company China Electric Power Research Institute Company Ltd. The remaining authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

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Figure 1. Transient responses of output voltage for a 6-bit linear and SAR search DLDO at (a) large load step (I/64→I) and (b) small load step (I/64→I/8). Both LDOs have the same maximum output current I.
Figure 1. Transient responses of output voltage for a 6-bit linear and SAR search DLDO at (a) large load step (I/64→I) and (b) small load step (I/64→I/8). Both LDOs have the same maximum output current I.
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Figure 2. Schematic of the conventional SAR control hybrid LDO.
Figure 2. Schematic of the conventional SAR control hybrid LDO.
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Figure 3. All adjusting cases of the conventional SAR controller.
Figure 3. All adjusting cases of the conventional SAR controller.
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Figure 4. FSM of the conventional SAR control.
Figure 4. FSM of the conventional SAR control.
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Figure 5. Hysteresis control in the CLASS-D. (a) Hysteresis comparator. (b) Operating waveforms.
Figure 5. Hysteresis control in the CLASS-D. (a) Hysteresis comparator. (b) Operating waveforms.
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Figure 6. Trajectories of the capacitance current and output voltage when the load resistance value changes from RL1 to RL2.
Figure 6. Trajectories of the capacitance current and output voltage when the load resistance value changes from RL1 to RL2.
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Figure 7. Adjusting process of the SAR controller when the load resistance value changes from RL1 to RL2.
Figure 7. Adjusting process of the SAR controller when the load resistance value changes from RL1 to RL2.
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Figure 8. Adjusting process of the SAR controller when the load resistance value changes from RL1 = 100 Ω to RL2 = 35 Ω.
Figure 8. Adjusting process of the SAR controller when the load resistance value changes from RL1 = 100 Ω to RL2 = 35 Ω.
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Figure 9. Schematic of the initial/last-state-correlated SAR control hybrid LDO.
Figure 9. Schematic of the initial/last-state-correlated SAR control hybrid LDO.
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Figure 10. FSM of initial/last-state-correlated SAR control.
Figure 10. FSM of initial/last-state-correlated SAR control.
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Figure 11. ALDO in a hybrid LDO.
Figure 11. ALDO in a hybrid LDO.
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Figure 12. Adjusting process of the initial/last-state-correlated SAR with ALDO when the load resistance value changes from RL1 = 100 Ω to RL2 = 3.5 Ω.
Figure 12. Adjusting process of the initial/last-state-correlated SAR with ALDO when the load resistance value changes from RL1 = 100 Ω to RL2 = 3.5 Ω.
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Figure 13. Adjusting process of initial/last-state-correlated SAR with ALDO when the load resistance value changes from RL1 = 100 Ω to RL2 = 35 Ω. (a) RM = 100 KΩ; (b) RM = 1 MΩ.
Figure 13. Adjusting process of initial/last-state-correlated SAR with ALDO when the load resistance value changes from RL1 = 100 Ω to RL2 = 35 Ω. (a) RM = 100 KΩ; (b) RM = 1 MΩ.
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Figure 14. Tracks of vout during the waiting cycles.
Figure 14. Tracks of vout during the waiting cycles.
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Figure 15. Current switching logic of DLDO and ALDO.
Figure 15. Current switching logic of DLDO and ALDO.
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Figure 16. Transistor schematic and small signal model of ALDO: (a) transistor schematic; (b) small signal model.
Figure 16. Transistor schematic and small signal model of ALDO: (a) transistor schematic; (b) small signal model.
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Figure 17. Phase margin of ALDO at the all-load current (a) without Miller compensation; (b) with capacitance Miller compensation; (c) with adaptive Miller compensation.
Figure 17. Phase margin of ALDO at the all-load current (a) without Miller compensation; (b) with capacitance Miller compensation; (c) with adaptive Miller compensation.
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Figure 18. Output voltage error with the load current.
Figure 18. Output voltage error with the load current.
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Figure 19. (a) Layout, (b) micrograph, and (c) package of the designed chip.
Figure 19. (a) Layout, (b) micrograph, and (c) package of the designed chip.
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Figure 20. Output voltage with the load current: (a) 100 MHz clock; (b) 10 MHz clock.
Figure 20. Output voltage with the load current: (a) 100 MHz clock; (b) 10 MHz clock.
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Figure 21. Overshoot and response time at the small load step (a) From 193 mA to 110 mA; (b) from 110 mA to 193 mA; (c) from 96 mA to 13 mA; (d) from 13 mA to 96 mA.
Figure 21. Overshoot and response time at the small load step (a) From 193 mA to 110 mA; (b) from 110 mA to 193 mA; (c) from 96 mA to 13 mA; (d) from 13 mA to 96 mA.
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Figure 22. Overshoot and response time at the large load step (a) From 26 mA to 178 mA; (b) from 178 mA to 26 mA.
Figure 22. Overshoot and response time at the large load step (a) From 26 mA to 178 mA; (b) from 178 mA to 26 mA.
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Table 1. Truth Table of P, Q [1], and Q [0].
Table 1. Truth Table of P, Q [1], and Q [0].
Output Voltage LevelChanging
Direction
PQ [1]Q [0]
VrefL < Vout < VrefH×0××
Vout < VrefL110
Vout < VrefL111
Vout > VrefH100
Vout > VrefH101
Table 2. Parameters of the example.
Table 2. Parameters of the example.
VINVrefI0fCLKCLVrefHVrefL
1.8 V1 V5 mA50 MHz100 nF1.01 V0.99 V
Table 3. Staring position setting logic.
Table 3. Staring position setting logic.
Initial StateQStarting Position
000000–01111111100000 (>last state)
100000–11111111111111 (>last state)
000000–01111100000000 (<last state)
100000–11111100011111 (<last state)
Table 4. Position setting logic.
Table 4. Position setting logic.
QEnding PositionGate Volatge
11Last state0
00Last state-6′b000001VDD
Table 5. Calculating steps of Vout and IC at each clock cycle.
Table 5. Calculating steps of Vout and IC at each clock cycle.
Differential EquationDiscrete FormCalculated Quantity
I C = C L d V o u t d t I C n = C L V o u t n + 1 V o u t n Δ T V o u t n + 1
V g R g + C M d V g V M d t = g m V o u t V r e f V g n R g + C M V g n + 1 V M n + 1 V g n V M n Δ T = g m V o u t n + 1 V r e f V g n + 1 V M n + 1
C M d V g V M d t = V M V o u t R M C M V g n + 1 V M n + 1 V g n V M n Δ T = V M n + 1 V o u t n + 1 R M V M n + 1 , V g n + 1
V M V o u t R M + I A + I D = I C + V o u t R L V M n + 1 V o u t n + 1 R M + I A n + 1 + I D = I C n + 1 + V o u t n + 1 R L I C n + 1
Table 6. Overshoots and response times of conventional SAR and proposed SAR controls.
Table 6. Overshoots and response times of conventional SAR and proposed SAR controls.
Control MethodsConventional SARProposed SAR
Load step (Ω)100→3.5100→35100→3.5100→35
Overshoot/Reverse Overshoot (mV)54887523
Response time (Tclk)27352416
Table 7. Performance comparison with reported works.
Table 7. Performance comparison with reported works.
LiteratureThis PaperJSSC, 2018 [13]JSSC, 2021 [5]ISSCC, 2020 [9]ISSCC, 2019 [15]
Process180 nm BCD65 nm CMOS65 nm CMOS28 nm CMOS65 nm CMOS
Area (mm2)0.630.0230.360.0490.048
Output Capacitance (nF)0.10.40.250.00411100
vin (V)1.20.5–11.20.5–10.5–1
vout (V)10.3–0.450.6–1.150.45–0.950.4–0.95
Power (mW)1–2000.03–0.9<57572–45<0.257
Current Peak Efficiency99.9%99.8%99.98%99.99%99.99%
Clock Frequency (MHz)1–1001–240100120×
Load Regulation (mV/mA)<0.06<5.60.03×<10
Linear Regulation (mV/V)1.62.3×××
Overshoot/Current step (mV/mA)0.5137.70.1220.26283.3
Transient time/Current step (μs/mA)0.1130.0140.000490.000003335.2
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MDPI and ACS Style

Wang, Y.; Ke, J.; Min, R.; Xu, H.; Guan, Z.; Zhang, S.; Liu, C.; Feng, J. Initial/Last-State-Correlated SAR Control with Optimized Trajectory to Reduce Reverse Overshoot and Smooth Current Switching of Hybrid LDOs. Electronics 2025, 14, 2051. https://doi.org/10.3390/electronics14102051

AMA Style

Wang Y, Ke J, Min R, Xu H, Guan Z, Zhang S, Liu C, Feng J. Initial/Last-State-Correlated SAR Control with Optimized Trajectory to Reduce Reverse Overshoot and Smooth Current Switching of Hybrid LDOs. Electronics. 2025; 14(10):2051. https://doi.org/10.3390/electronics14102051

Chicago/Turabian Style

Wang, Yinyu, Jinkun Ke, Run Min, Hangyu Xu, Zhaoliang Guan, Shuo Zhang, Chang Liu, and Jingbo Feng. 2025. "Initial/Last-State-Correlated SAR Control with Optimized Trajectory to Reduce Reverse Overshoot and Smooth Current Switching of Hybrid LDOs" Electronics 14, no. 10: 2051. https://doi.org/10.3390/electronics14102051

APA Style

Wang, Y., Ke, J., Min, R., Xu, H., Guan, Z., Zhang, S., Liu, C., & Feng, J. (2025). Initial/Last-State-Correlated SAR Control with Optimized Trajectory to Reduce Reverse Overshoot and Smooth Current Switching of Hybrid LDOs. Electronics, 14(10), 2051. https://doi.org/10.3390/electronics14102051

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