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Journal: Electronics, 2025
Volume: 14
Number: 1991

Article: Using Triangular Gate Voltage Pulses to Evaluate Hysteresis and Charge Trapping Effects in GaN on Si HEMTs
Authors: by Pasquale Cusumano, Flavio Vella and Alessandro Sirchia
Link: https://www.mdpi.com/2079-9292/14/10/1991

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