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Journal: Electronics, 2025
Volume: 14
Number: 1991
Article:
Using Triangular Gate Voltage Pulses to Evaluate Hysteresis and Charge Trapping Effects in GaN on Si HEMTs
Authors:
by
Pasquale Cusumano, Flavio Vella and Alessandro Sirchia
Link:
https://www.mdpi.com/2079-9292/14/10/1991
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