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Journal: Electronics, 2024
Volume: 13
Number: 1701
1701
Article: SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect
Authors: by Ling Sang, Rui Jin, Jiawei Cui, Xiping Niu, Zheyang Li, Junjie Yang, Muqin Nuo, Meng Zhang, Maojun Wang and Jin Wei
Link: https://www.mdpi.com/2079-9292/13/9/1701

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