Order Article Reprints

Hu P, Gao Z, Yang L, Li W, Liu X, Li T, Qian Y, Liang L, Hu Y, Cao H. Effect of In-Situ H Doping on the Electrical Properties of In₂O₃ Thin-Film Transistors. Electronics. 2024; 13(8):1478. https://doi.org/10.3390/electronics13081478

Hu, Peixuan, Zhixiang Gao, Lu Yang, Wanfa Li, Xiaohan Liu, Ting Li, Yujia Qian, Lingyan Liang, Yufang Hu, and Hongtao Cao. 2024. "Effect of In-Situ H Doping on the Electrical Properties of In₂O₃ Thin-Film Transistors" Electronics 13, no. 8: 1478. https://doi.org/10.3390/electronics13081478

Hu, P., Gao, Z., Yang, L., Li, W., Liu, X., Li, T., Qian, Y., Liang, L., Hu, Y., & Cao, H. (2024). Effect of In-Situ H Doping on the Electrical Properties of In₂O₃ Thin-Film Transistors. Electronics, 13(8), 1478. https://doi.org/10.3390/electronics13081478