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Journal: Electronics, 2024
Volume: 13
Number: 681
Article:
Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)
Authors:
by
Yeon-Seok Kim, Chang-Young Lim and Min-Woo Kwon
Link:
https://www.mdpi.com/2079-9292/13/4/681
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