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Shi L, Qian J, Jin M, Bhattacharya M, Houshmand S, Yu H, Shimbori A, White MH, Agarwal AK. Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress. Electronics. 2024; 13(22):4516. https://doi.org/10.3390/electronics13224516

Shi, Limeng, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Shiva Houshmand, Hengyu Yu, Atsushi Shimbori, Marvin H. White, and Anant K. Agarwal. 2024. "Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress" Electronics 13, no. 22: 4516. https://doi.org/10.3390/electronics13224516

Shi, L., Qian, J., Jin, M., Bhattacharya, M., Houshmand, S., Yu, H., Shimbori, A., White, M. H., & Agarwal, A. K. (2024). Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress. Electronics, 13(22), 4516. https://doi.org/10.3390/electronics13224516