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Journal: ElectronicsVolume: 13Number: 4516
Article: Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress
  • Authors:
  • Limeng Shi1,*,
  • Jiashu Qian1 and
  • Michael Jin1
  • et al.
Link: https://www.mdpi.com/2079-9292/13/22/4516

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