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Journal: Electronics, 2024
Volume: 13
Number: 4488

Article: Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier
Authors: by Qingyu Wu, Chenchen Xie, Sannian Song, Xing Ding, Xi Li and Zhitang Song
Link: https://www.mdpi.com/2079-9292/13/22/4488

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