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Journal: Electronics, 2024
Volume: 13
Number: 451
Article:
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications
Authors:
by
Seonjun Choi, Jin-Seong Park, Myounggon Kang, Hong-sik Jung and Yun-heub Song
Link:
https://www.mdpi.com/2079-9292/13/2/451
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