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Journal: Electronics, 2024
Volume: 13
Number: 451

Article: An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications
Authors: by Seonjun Choi, Jin-Seong Park, Myounggon Kang, Hong-sik Jung and Yun-heub Song
Link: https://www.mdpi.com/2079-9292/13/2/451

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