Wzorek, M.; Ekielski, M.; Piskorski, K.; Tarenko, J.; Borysiewicz, M.A.; Brzozowski, E.; Taube, A.
Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics 2024, 13, 3429.
https://doi.org/10.3390/electronics13173429
AMA Style
Wzorek M, Ekielski M, Piskorski K, Tarenko J, Borysiewicz MA, Brzozowski E, Taube A.
Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics. 2024; 13(17):3429.
https://doi.org/10.3390/electronics13173429
Chicago/Turabian Style
Wzorek, Marek, Marek Ekielski, Krzysztof Piskorski, Jarosław Tarenko, Michał A. Borysiewicz, Ernest Brzozowski, and Andrzej Taube.
2024. "Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure" Electronics 13, no. 17: 3429.
https://doi.org/10.3390/electronics13173429
APA Style
Wzorek, M., Ekielski, M., Piskorski, K., Tarenko, J., Borysiewicz, M. A., Brzozowski, E., & Taube, A.
(2024). Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics, 13(17), 3429.
https://doi.org/10.3390/electronics13173429
