Article Versions Notes

Tian J, Cao R, Liu Y, Cai Y, Mei B, Zhao L, Cui S, Lv H, Xue Y. Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA. Electronics. 2024; 13(12):2233. https://doi.org/10.3390/electronics13122233

Tian, Jiayu, Rongxing Cao, Yan Liu, Yulong Cai, Bo Mei, Lin Zhao, Shuai Cui, He Lv, and Yuxiong Xue. 2024. "Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA" Electronics 13, no. 12: 2233. https://doi.org/10.3390/electronics13122233

Tian, J., Cao, R., Liu, Y., Cai, Y., Mei, B., Zhao, L., Cui, S., Lv, H., & Xue, Y. (2024). Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA. Electronics, 13(12), 2233. https://doi.org/10.3390/electronics13122233