Order Article Reprints

Fu W, Ma T, Lei Z, Peng C, Zhang H, Zhang Z, Xiao T, Song H, Wang Y, Wang J, et al. Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes. Electronics. 2024; 13(11):2215. https://doi.org/10.3390/electronics13112215

Fu, Weili, Teng Ma, Zhifeng Lei, Chao Peng, Hong Zhang, Zhangang Zhang, Tao Xiao, Hongjia Song, Yuangang Wang, Jinbin Wang, and et al. 2024. "Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes" Electronics 13, no. 11: 2215. https://doi.org/10.3390/electronics13112215

Fu, W., Ma, T., Lei, Z., Peng, C., Zhang, H., Zhang, Z., Xiao, T., Song, H., Wang, Y., Wang, J., Fu, Z., & Zhong, X. (2024). Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes. Electronics, 13(11), 2215. https://doi.org/10.3390/electronics13112215