Kang, Z.; Xie, X.; Liu, Y.; Chen, D.; Yuan, H.; Zhao, L.; Zhao, H.; Yang, C.; Zheng, G.
A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State. Electronics 2024, 13, 2108.
https://doi.org/10.3390/electronics13112108
AMA Style
Kang Z, Xie X, Liu Y, Chen D, Yuan H, Zhao L, Zhao H, Yang C, Zheng G.
A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State. Electronics. 2024; 13(11):2108.
https://doi.org/10.3390/electronics13112108
Chicago/Turabian Style
Kang, Zhuang, Xiaofeng Xie, Yang Liu, Daibing Chen, Haitao Yuan, Liu Zhao, Hai Zhao, Chengliang Yang, and Guiqiang Zheng.
2024. "A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State" Electronics 13, no. 11: 2108.
https://doi.org/10.3390/electronics13112108
APA Style
Kang, Z., Xie, X., Liu, Y., Chen, D., Yuan, H., Zhao, L., Zhao, H., Yang, C., & Zheng, G.
(2024). A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State. Electronics, 13(11), 2108.
https://doi.org/10.3390/electronics13112108
