Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mappingâ€
, Li Chen 3, Sai Li 4, Rui Liu 3, Xuantian Li 3, Shuting Shi 3, Cheng Gu 3 and Jianwei Han 1,2
Round 1
Reviewer 1 Report
1. In the introduction, include a paragraph about the leading transistor technologies for future processors. (Refer the below mentioned papers)
A) https://www.sciencedirect.com/science/article/pii/S002626921630026X
B) https://www.sciencedirect.com/science/article/pii/S002626922100152X
C) https://www.sciencedirect.com/science/article/pii/S2773012323000213
2. Figure 2 shows the architecture of the OR2 gate chain, the output of which is con- 85 nected to two independent SET detectors..................PLEASE CHECK OR2 gate or OR gate
3. Fig. 2 c and Fig. 3 and Fig. 8 quality needs to be improved.
4. In Fig. 9, mark the units of dimensions.
5. In Fig. 10, replace "mv" with "mV"
6. Reference section is poor, I found only one refence which is published after 2020, Please update the reference section.
Author Response
We quite appreciate your insightful comments concerning our manuscript. Those comments are very valuable and helpful for improving the quality and readability of our paper. We have revised the paper according to your comments. See the attachment for the main modifications corresponding to your comments.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
1. An interesting paper regarding SET in 28nm UTBB FDSOI.
2. What is the main difference between this paper and [28],[29]?
3. Authors use a laser test for SET in this paper, please give a completed comparison with other testing methods.
4. I suggest that author can provide a clear discussion about how to prevent SET in modern IC design.
5. I suggest that author can also provide the performance comparison table to highlight contribution of this paper.
Author Response
We quite appreciate your insightful comments concerning our manuscript. Those comments are very valuable and helpful for improving the quality and readability of our paper. We have revised the paper according to your comments. See the attachment for the main modifications corresponding to your comments.
Author Response File: Author Response.pdf
Reviewer 3 Report
The authors of the paper entitled “Single Event Transient Study in 28nm UTBB-FDSOI Technology Using Pulsed Laser Mapping” presents a well-elaborated SET study with interesting results. The work is extremely interesting and I think it will be of interest to many of the readers of the Journal Electronics. Unfortunately, not enough data or a sufficient description of the experimental setup that was the basis of the measurements made are not included. The presentation of this experimental setup would add value to this work. Without the presentation of this experimental setup, it can be considered that we have an advanced simulation. To remedy this situation, I recommend a major revision.
Author Response
We quite appreciate your insightful comments on our manuscript, which are very helpful for improving the quality and readability of our paper. In the second part of the article, we added the description of the experimental setup. see the attachment for the main modifications corresponding to your comments.
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
Nil
Author Response
Thank you for signing the pass for our manuscript. The attachment is the final version of the manuscript, slightly modified compared with the previous version.
Author Response File: Author Response.pdf
Reviewer 2 Report
The title of this paper and [27] is very similar, and the test chip is the same. I suggest that author should list the difference between these two papers, and explain the main contributions of this paper.
Author Response
Point: The title of this paper and [27] is very similar, and the test chip is the same. I suggest that author should list the difference between these two papers, and explain the main contributions of this paper.
Response: Your question is very precise and reasonable, and we should think deeply. Although the name of the manuscript we submitted is similar to that of the article published by Rui Liu, the focus point is different:
The main research content of the journal paper published by Rui Liu is based on the design of SET pulse measurement circuit and chip in 28nm FDSOI process. And, he also conducted heavy ion and Co-60 tests on the SET performance and TID performance of the chip, which verified the success of its design.
Taking this chip as the research object, we draw the chip's SET-sensitive bitmap by using the pulsed laser for the advantages of the small size of the beam spot and the accurate controllability of injecting. At the same time, we reveal the internal reason for SET pulse broadening through circuit simulation and provide design ideas to weaken the SET pulse effect under this technology process.
The attachment is the final version of the manuscript, slightly modified compared with the previous version.
Author Response File: Author Response.pdf
Reviewer 3 Report
The authors of the paper entitled ”Single Event Transient Study in 28nm UTBB-FDSOI Technology Using Pulsed Laser Mapping” they made few progress in the revised form of the manuscript. The minimum requirements were met and they brought sufficient details about the experimental area, not of good graphic quality. Some phrases have remained clumsy or uninspired, in my opinion, but checking the manuscript in the editing process can eliminate these situations.
Author Response
Point: The authors of the paper entitled ”Single Event Transient Study in 28nm UTBB-FDSOI Technology Using Pulsed Laser Mapping” they made few progress in the revised form of the manuscript. The minimum requirements were met and they brought sufficient details about the experimental area, not of good graphic quality. Some phrases have remained clumsy or uninspired, in my opinion, but checking the manuscript in the editing process can eliminate these situations.
Response : Thank you for your suggestions, which greatly help us to provide the quality of the manuscript. We carefully checked and improved the manuscript. In addition, figure 3 (a) shows the situation of using infrared CCD to illuminate the inside of the chip. The picture quality is poor due to the influence of light intensity and imaging depth. Unfortunately, it is determined by the experimental equipment that it cannot be improved.
The attachment is the final version of the manuscript, with some modifications compared with the previous version.
Author Response File: Author Response.pdf
Round 3
Reviewer 2 Report
The authors have replied all my questions, no more comments.
