Pharkphoumy, S.; Janardhanam, V.; Jang, T.-H.; Shim, K.-H.; Choi, C.-J.
Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates. Electronics 2023, 12, 1049.
https://doi.org/10.3390/electronics12041049
AMA Style
Pharkphoumy S, Janardhanam V, Jang T-H, Shim K-H, Choi C-J.
Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates. Electronics. 2023; 12(4):1049.
https://doi.org/10.3390/electronics12041049
Chicago/Turabian Style
Pharkphoumy, Sakhone, Vallivedu Janardhanam, Tae-Hoon Jang, Kyu-Hwan Shim, and Chel-Jong Choi.
2023. "Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates" Electronics 12, no. 4: 1049.
https://doi.org/10.3390/electronics12041049
APA Style
Pharkphoumy, S., Janardhanam, V., Jang, T.-H., Shim, K.-H., & Choi, C.-J.
(2023). Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates. Electronics, 12(4), 1049.
https://doi.org/10.3390/electronics12041049