Wang, D.; Sun, X.; Liu, T.; Chen, K.; Yang, J.; Wu, C.; Xu, M.; Zhang, W.
Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node. Electronics 2023, 12, 770.
https://doi.org/10.3390/electronics12030770
AMA Style
Wang D, Sun X, Liu T, Chen K, Yang J, Wu C, Xu M, Zhang W.
Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node. Electronics. 2023; 12(3):770.
https://doi.org/10.3390/electronics12030770
Chicago/Turabian Style
Wang, Dawei, Xin Sun, Tao Liu, Kun Chen, Jingwen Yang, Chunlei Wu, Min Xu, and Wei (David) Zhang.
2023. "Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node" Electronics 12, no. 3: 770.
https://doi.org/10.3390/electronics12030770
APA Style
Wang, D., Sun, X., Liu, T., Chen, K., Yang, J., Wu, C., Xu, M., & Zhang, W.
(2023). Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node. Electronics, 12(3), 770.
https://doi.org/10.3390/electronics12030770
