Next Article in Journal
Time Synchronization and Space Registration of Roadside LiDAR and Camera
Previous Article in Journal
Visual Three-Dimensional Reconstruction Based on Spatiotemporal Analysis Method
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Electronics
Volume 12
Issue 3
10.3390/electronics12030536
electronics-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit

by
Lubna Majeed
1,
Syed Intekhab Amin
1,
Zuber Rasool
1,
Ishrat Bashir
1,
Naveen Kumar
2,* and
Sunny Anand
3
1
Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi 110025, India
2
Department of Electronics and Nanoscale Engineering, University of Glasgow, Glasgow G128QQ, UK
3
Department of Electronics and Communication Engineering, Amity University, Noida 201313, India
*
Author to whom correspondence should be addressed.
Electronics 2023, 12(3), 536; https://doi.org/10.3390/electronics12030536
Submission received: 21 November 2022 / Revised: 12 January 2023 / Accepted: 16 January 2023 / Published: 20 January 2023
(This article belongs to the Special Issue Embedded FET for Application as a Biosensor)
Browse Figures
Versions Notes

Abstract

A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed that will be able to detect the variations in the aqueous (electrolyte) medium. In this structure, a source-sided underlap technique with a dual-gate sensing approach has been used. The change in ON-current (ION) was observed due to parallel examination of electrolytes in two gates underlapping the region of the structure. For the evaluation of the sensitivity of DG-OFET, the change in the drain current was exploited for different pH and corresponding charge densities utilizing 2D physics-based numerical simulation. The simulation results were extracted with the help of the software package Silvaco TCAD-ATLAS. The simulated results display that the proposed DG-OFET shows significantly higher sensitivity for high-k dielectrics. The voltage sensitivity achieved by DG-OFET with SiO2 as a dielectric in our work is 217.53 mV/pH which surpasses the Nernst Limit nearly four times. However, using a high-k dielectric (Ta2O5) increases it further to 555.284 mV/pH which is more than nine times the Nernst Limit. The DG-OFET pH sensor has a lot of potential in the future for various flexible sensing applications due to its flexibility, being highly sensitive, biocompatible and low-cost.
Keywords: pH; sensitivity; pentacene; organic FET; electrolyte; Nernst limit pH; sensitivity; pentacene; organic FET; electrolyte; Nernst limit

Share and Cite

MDPI and ACS Style

Majeed, L.; Amin, S.I.; Rasool, Z.; Bashir, I.; Kumar, N.; Anand, S. TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics 2023, 12, 536. https://doi.org/10.3390/electronics12030536

AMA Style

Majeed L, Amin SI, Rasool Z, Bashir I, Kumar N, Anand S. TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics. 2023; 12(3):536. https://doi.org/10.3390/electronics12030536

Chicago/Turabian Style

Majeed, Lubna, Syed Intekhab Amin, Zuber Rasool, Ishrat Bashir, Naveen Kumar, and Sunny Anand. 2023. "TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit" Electronics 12, no. 3: 536. https://doi.org/10.3390/electronics12030536

APA Style

Majeed, L., Amin, S. I., Rasool, Z., Bashir, I., Kumar, N., & Anand, S. (2023). TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics, 12(3), 536. https://doi.org/10.3390/electronics12030536

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop