Xu, H.; Wang, B.; Ren, N.; Long, H.; Huang, K.; Sheng, K.
Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs. Electronics 2023, 12, 4849.
https://doi.org/10.3390/electronics12234849
AMA Style
Xu H, Wang B, Ren N, Long H, Huang K, Sheng K.
Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs. Electronics. 2023; 12(23):4849.
https://doi.org/10.3390/electronics12234849
Chicago/Turabian Style
Xu, Hongyi, Baozhu Wang, Na Ren, Hu Long, Kai Huang, and Kuang Sheng.
2023. "Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs" Electronics 12, no. 23: 4849.
https://doi.org/10.3390/electronics12234849
APA Style
Xu, H., Wang, B., Ren, N., Long, H., Huang, K., & Sheng, K.
(2023). Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs. Electronics, 12(23), 4849.
https://doi.org/10.3390/electronics12234849