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Journal: Electronics, 2023
Volume: 12
Number: 4650

Article: Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays
Authors: by DongJun Jang and Min-Woo Kwon
Link: https://www.mdpi.com/2079-9292/12/22/4650

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