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Journal: Electronics, 2023
Volume: 12
Number: 4336

Article: Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band
Authors: by Che-Wei Hsu, Yueh-Chin Lin, Ming-Wen Lee and Edward-Yi Chang
Link: https://www.mdpi.com/2079-9292/12/20/4336

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