Order Article Reprints

He H, Zhou X, Liu Y, Liu W, Yang J, Zhang H, Xie G, Liu W. Large-Scale β-Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage. Electronics. 2023; 12(20):4315. https://doi.org/10.3390/electronics12204315

He, Hao, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, and Wenjun Liu. 2023. "Large-Scale β-Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage" Electronics 12, no. 20: 4315. https://doi.org/10.3390/electronics12204315

He, H., Zhou, X., Liu, Y., Liu, W., Yang, J., Zhang, H., Xie, G., & Liu, W. (2023). Large-Scale β-Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage. Electronics, 12(20), 4315. https://doi.org/10.3390/electronics12204315