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Journal: Electronics, 2023
Volume: 12
Number: 3673
Article:
Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method
Authors:
by
Maissa Belkhiria, Fatma Aouaini, Shatha A. Aldaghfag, Fraj Echouchene and Hafedh Belmabrouk
Link:
https://www.mdpi.com/2079-9292/12/17/3673
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