Belkhiria, M.; Aouaini, F.; A. Aldaghfag, S.; Echouchene, F.; Belmabrouk, H.
Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method. Electronics 2023, 12, 3673.
https://doi.org/10.3390/electronics12173673
AMA Style
Belkhiria M, Aouaini F, A. Aldaghfag S, Echouchene F, Belmabrouk H.
Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method. Electronics. 2023; 12(17):3673.
https://doi.org/10.3390/electronics12173673
Chicago/Turabian Style
Belkhiria, Maissa, Fatma Aouaini, Shatha A. Aldaghfag, Fraj Echouchene, and Hafedh Belmabrouk.
2023. "Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method" Electronics 12, no. 17: 3673.
https://doi.org/10.3390/electronics12173673
APA Style
Belkhiria, M., Aouaini, F., A. Aldaghfag, S., Echouchene, F., & Belmabrouk, H.
(2023). Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method. Electronics, 12(17), 3673.
https://doi.org/10.3390/electronics12173673