Article Versions Notes

Liang X, Feng H, Xiang Y, Sun J, Wei Y, Zhang D, Li Y, Feng J, Yu X, Guo Q. Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation. Electronics. 2023; 12(13):2886. https://doi.org/10.3390/electronics12132886

Liang, Xiaowen, Haonan Feng, Yutang Xiang, Jing Sun, Ying Wei, Dan Zhang, Yudong Li, Jie Feng, Xuefeng Yu, and Qi Guo. 2023. "Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation" Electronics 12, no. 13: 2886. https://doi.org/10.3390/electronics12132886

Liang, X., Feng, H., Xiang, Y., Sun, J., Wei, Y., Zhang, D., Li, Y., Feng, J., Yu, X., & Guo, Q. (2023). Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation. Electronics, 12(13), 2886. https://doi.org/10.3390/electronics12132886