Article Versions Notes

Lu W, Lu Y, Dong L, Peng C, Wu X, Lin Z, Chen J. Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications. Electronics. 2022; 11(20):3392. https://doi.org/10.3390/electronics11203392

Lu, Wenjuan, Yixiao Lu, Lanzhi Dong, Chunyu Peng, Xiulong Wu, Zhiting Lin, and Junning Chen. 2022. "Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications" Electronics 11, no. 20: 3392. https://doi.org/10.3390/electronics11203392

Lu, W., Lu, Y., Dong, L., Peng, C., Wu, X., Lin, Z., & Chen, J. (2022). Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications. Electronics, 11(20), 3392. https://doi.org/10.3390/electronics11203392