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Kim GU, Yoon YJ, Seo JH, Lee SH, Park J, Kang GE, Heo JH, Jang J, Bae J-H, Lee S-H, et al. Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon. Electronics. 2022; 11(20):3365. https://doi.org/10.3390/electronics11203365

Kim, Geon Uk, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and et al. 2022. "Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon" Electronics 11, no. 20: 3365. https://doi.org/10.3390/electronics11203365

Kim, G. U., Yoon, Y. J., Seo, J. H., Lee, S. H., Park, J., Kang, G. E., Heo, J. H., Jang, J., Bae, J.-H., Lee, S.-H., & Kang, I. M. (2022). Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon. Electronics, 11(20), 3365. https://doi.org/10.3390/electronics11203365