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Journal: Electronics, 2022
Volume: 11
Number: 3050

Article: Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Authors: by Yuan Liu, Weijie Ye, Xiaoming Xiong and Wanling Deng
Link: https://www.mdpi.com/2079-9292/11/19/3050

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