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Article

Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves

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V. Kotelnikov Institute of Radio Engineering and Electronics of RAS, 103907 Moscow, Russia
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Institute of Applied Physics of RAS, 603155 Nizhny Novgorod, Russia
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P.L. Kapitza Institute for Physical Problems, 119334 Moscow, Russia
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NIU Higher School of Economics, 109028 Moscow, Russia
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Department Quantum Device Physics, Chalmers University of Technology, SE41296 Göteborg, Sweden
*
Author to whom correspondence should be addressed.
Academic Editor: Lingwei Li
Electronics 2021, 10(23), 2894; https://doi.org/10.3390/electronics10232894
Received: 15 October 2021 / Revised: 22 November 2021 / Accepted: 22 November 2021 / Published: 23 November 2021
(This article belongs to the Special Issue Nanofabrication of Superconducting Circuits)
Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator–superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with two-step direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels. View Full-Text
Keywords: SIS (superconductor–insulator–superconductor) junctions; SIN (superconductor–insulator–normal metal) junctions; Abrikosov vortices SIS (superconductor–insulator–superconductor) junctions; SIN (superconductor–insulator–normal metal) junctions; Abrikosov vortices
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MDPI and ACS Style

Tarasov, M.; Gunbina, A.; Fominsky, M.; Chekushkin, A.; Vdovin, V.; Koshelets, V.; Sohina, E.; Kalaboukhov, A.; Edelman, V. Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves. Electronics 2021, 10, 2894. https://doi.org/10.3390/electronics10232894

AMA Style

Tarasov M, Gunbina A, Fominsky M, Chekushkin A, Vdovin V, Koshelets V, Sohina E, Kalaboukhov A, Edelman V. Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves. Electronics. 2021; 10(23):2894. https://doi.org/10.3390/electronics10232894

Chicago/Turabian Style

Tarasov, Mikhail, Aleksandra Gunbina, Mikhail Fominsky, Artem Chekushkin, Vyacheslav Vdovin, Valery Koshelets, Elizaveta Sohina, Alexei Kalaboukhov, and Valerian Edelman. 2021. "Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves" Electronics 10, no. 23: 2894. https://doi.org/10.3390/electronics10232894

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