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Journal: Electronics, 2021
Volume: 10
Number: 2570

Article: Optimization of Self-Heating Driven Leakage Current Properties of Gate-All-Around Field-Effect Transistors Using Neural Network Modeling and Genetic Algorithm
Authors: by Chuntaek Park and Ilgu Yun
Link: https://www.mdpi.com/2079-9292/10/21/2570

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