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Caruso E, Esseni D, Gnani E, Lizzit D, Palestri P, Pin A, Puglisi FM, Selmi L, Zagni N. Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach. Electronics. 2021; 10(20):2472. https://doi.org/10.3390/electronics10202472

Caruso, Enrico, David Esseni, Elena Gnani, Daniel Lizzit, Pierpaolo Palestri, Alessandro Pin, Francesco Maria Puglisi, Luca Selmi, and Nicolò Zagni. 2021. "Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach" Electronics 10, no. 20: 2472. https://doi.org/10.3390/electronics10202472

Caruso, E., Esseni, D., Gnani, E., Lizzit, D., Palestri, P., Pin, A., Puglisi, F. M., Selmi, L., & Zagni, N. (2021). Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach. Electronics, 10(20), 2472. https://doi.org/10.3390/electronics10202472