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Journal: Electronics, 2021
Volume: 10
Number: 1295

Article: Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors
Authors: by Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang and Hyuck-In Kwon
Link: https://www.mdpi.com/2079-9292/10/11/1295

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