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Coatings 2019, 9(2), 136;

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Guangxi Key Laboratory of Automatic Detecting Technology and Instruments, Guilin University of Electronic Technology, Guilin 541004, China
State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Chengdu 610209, China
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Received: 24 December 2018 / Revised: 4 February 2019 / Accepted: 8 February 2019 / Published: 20 February 2019
(This article belongs to the Special Issue Electrochromic Thin Films and Devices)
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Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device. View Full-Text
Keywords: AlSb:Zn films; decreased band gap; deliquescence; PN junction AlSb:Zn films; decreased band gap; deliquescence; PN junction

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Tang, P.; Wang, W.; Li, B.; Feng, L.; Zeng, G. The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition. Coatings 2019, 9, 136.

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