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Open AccessArticle

Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors

Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China
Authors to whom correspondence should be addressed.
Coatings 2019, 9(10), 619;
Received: 24 August 2019 / Revised: 24 September 2019 / Accepted: 26 September 2019 / Published: 27 September 2019
The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices. View Full-Text
Keywords: thin-film transistor; ink-jet printing; plasma treatment; annealing thin-film transistor; ink-jet printing; plasma treatment; annealing
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MDPI and ACS Style

Yan, X.; Shi, K.; Chu, X.; Yang, F.; Chi, Y.; Yang, X. Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors. Coatings 2019, 9, 619.

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