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The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

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CCDC Army Research Laboratory, 6300 Rodman Road, Aberdeen Proving Ground, MD 21005, USA
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CCDC C5ISR Center, 6630 Surveillance Loop, Aberdeen Proving Ground, MD 21005, USA
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Author to whom correspondence should be addressed.
Coatings 2019, 9(10), 594; https://doi.org/10.3390/coatings9100594
Received: 2 August 2019 / Revised: 10 September 2019 / Accepted: 16 September 2019 / Published: 20 September 2019
Tunable complex oxide thin films have generated a lot of interest in recent years due to their potential to become a core technology in the new generation of multiple communications devices. These films are grown via different deposition methods and frequently postprocessed in order to enhance their dielectric properties. This paper discusses an alternative postprocessing technique where complex oxide thin films grown by radio frequency (RF) magnetron sputtering have been treated with an external microwave field instead of a conventional furnace. The treated films and untreated reference film were characterized for their microstructure and dielectric properties. The obtained results indicate a significant reduction in dielectric losses and leakage current in the microwave processed films as opposed to the untreated reference. The results are discussed together with potential additional benefits of the proposed approach. View Full-Text
Keywords: tunable complex oxide thin films; microwave processing; thin film characterization tunable complex oxide thin films; microwave processing; thin film characterization
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MDPI and ACS Style

Shreiber, D.; Ivill, M.P.; Ngo, E.H.; Hirsch, S.G.; Hubbard, C.W.; Carroll, J.F. The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties. Coatings 2019, 9, 594.

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