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Article

Fabrication and Characterization of CH3NH3PbI3 Perovskite Photovoltaic Devices with Decaphenylcyclopentasilane Hole Transport Layers

1
Department of Materials Chemistry, The University of Shiga Prefecture, 2500 Hassaka, Hikone 522-8533, Shiga, Japan
2
Osaka Gas Chemicals Co., Ltd., 5-11-61 Torishima, Konohana-ku, Osaka 554-0051, Osaka, Japan
*
Author to whom correspondence should be addressed.
Coatings 2025, 15(3), 253; https://doi.org/10.3390/coatings15030253
Submission received: 10 December 2024 / Revised: 10 February 2025 / Accepted: 18 February 2025 / Published: 20 February 2025

Abstract

:
Decaphenylcyclopentasilane (DPPS) was applied as a hole transport layer for CH3NH3PbI3 solar cells, and the photovoltaic properties were investigated. The insertion of the double DPPS layers between the perovskite crystal and the gold electrodes increased short-circuit current densities and open-circuit voltages, and the conversion efficiencies were improved. The external quantum efficiencies increased in the visible light region, and the maximum power point tracking tests under air mass 1.5 light irradiation indicated the effectiveness of the DPPS layer. Microstructural analysis showed that no PbI2 compound was formed for the DPPS-inserted perovskite, which indicates the suppression of methylammonium desorption from the perovskite crystal. The double DPPS-induced devices were also stable in air for more than 1 year, which indicates that stable DPPS can reliably transport holes and has great potential for the future solar cell materials.

1. Introduction

Perovskite halide compounds are expected to be one of the candidate materials for next generation solar cells [1,2,3,4]. The perovskite solar cells are composed of a transparent conducting substrate, an electron transport layer, a photoactive layer with various perovskite structures, a hole transport layer, and metal electrodes, and their performance as photovoltaic devices is dependent on several factors [5,6,7,8]. A hole transport material (HTM) is important to extract holes from the perovskite layer [9,10,11,12], and 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene (spiro-OMeTAD) has been widely used for the HTM layer. The addition of dopants is a standard approach for spiro-OMeTAD due to its low hole mobility [13,14]. The combination of lithium bis(trifluoromethanesulphonyl)imide (Li-TFSI) and 4-tert-butylpyridine produces a useful dopant [15,16,17]. However, these dopants are highly hygroscopic and cause deterioration of the adjacent perovskite layers [18,19,20]. Therefore, dopant-free new HTMs have also been developed [21,22,23,24,25,26].
Polysilanes are silicon-based polymer compounds comprising Si-Si bonds, and they have electronic and optical properties due to the sigma conjugation derived from these Si-Si bonds. Recent studies have reported on the application of polysilane in perovskite photovoltaic devices as a protective material for perovskite [27,28]. Decaphenylcyclopentasilane (DPPS) was found to be a stable material above 200 °C and may have a hole transport property [27]. First-principles molecular orbital calculations indicated that DPPS was also effective as a hole transport material [28].
In the previous studies, the photovoltaic properties of the devices were improved by spin-coating DPPS solution on the perovskite layer and annealing above 190 °C [27,29]. The DPPS-inserted layers were also reported to provide long-term stability in air and to function as a protective layer for the perovskite crystals [30]. In addition, the process of alternating the layers of the DPPS and perovskite precursor solutions was also reported [30]. Since the effects of stacking the DPPS layer remain unclear, further studies are needed.
The aim of this study is the fabrication and characterization of CH3NH3PbI3 perovskite photovoltaic devices using DPPS as a simple hole transport layer. The fabricated devices are evaluated using current–voltage measurements under simulated sunlight and microstructural analysis using X-ray diffraction (XRD).

2. Experimental Procedures

A schematic illustration of the fabricated device is shown in Figure 1. All devices were fabricated in ambient air under the temperature and humidity of ~25 °C and ~40%, respectively. The detailed fabrication procedures of the TiO2 and perovskite layers for the photovoltaic devices were described in the previous works [28,30].
The perovskite precursors were arranged by stirring CH3NH3I (190.8 mg) and PbCl2 (111.2 mg) in N′N-dimethylformamide (0.5 mL) at 60 °C for 24 h. The precursors were spin-coated onto the TiO2 layer using an air-blow procedure [30,31]. A solution of 10 mg DPPS (Osaka Gas Chemicals, OGSOL SI-30-15) in 0.5 mL chlorobenzene was dropped onto the perovskite layer during spinning. To crystalize the perovskites, the cells were heat-treated for 5 min at 190 °C. Then, the DPPS solutions (10 or 20 mg mL−1, denoted as DPPS-10 or DPPS-20) were spin-coated again on the first DPPS layer for 30 s at 4000 rpm. Lastly, a gold (Au) electrode was constructed on the second DPPS film by vacuum deposition.
The current density and voltage of the cells were measured using a solar simulator (100 mW cm−2), and the illuminated area was 0.040 cm2. The external quantum efficiencies (EQEs) of the prepared cells were also measured.

3. Results and Discussion

The J–V characteristics under illumination of the fabricated devices are shown in Figure 2a. The measured photovoltaic parameters of the devices are summarized in Table 1. The measured parameters were as follows: VOC: open-circuit voltage, JSC: short-circuit current density, FF: fill factor, η: power conversion efficiency, ηave: average efficiency of six cells, Rs: series resistance, and Rsh: shunt resistance. The DPPS solutions of 10 or 20 mg mL−1 were spin-coated onto the perovskite layer and labeled as DPPS-10 and DPPS-20, respectively. The structure of the control device was FTO/TiO2/CH3NH3PbI3/Au without a hole transport layer, denoted as w/o DPPS. The photovoltaic cells were constructed in the atmospheric air, and the reference device had low efficiencies because it did not include a hole transport layer to reveal the effects of the DPPS layer. The introduction of the DPPS layers significantly increased JSC and VOC and improved the conversion efficiency from 0.91% to 6.63%. In addition, the FF and Rsh values also increased. These results suggest that the leakage currents were reduced, which facilitated hole transport between the DPPS and perovskite layers. As described in the experimental section, the photovoltaic cells were prepared in the atmosphere. Although there are potential variabilities in efficiencies as observed between the average and highest efficiencies, there is clearly an effect of including DPPS, even considering the variabilities.
Changes in the J–V characteristics were measured; the J–V curves aged for 60 days with the highest device performances are shown in Figure 2b, with the detailed parameters listed in Table 1. Changes in the photoconversion efficiencies of the prepared devices are plotted in Figure 3. The photovoltaic devices were held in the dark at a temperature of 22 °C and a humidity of ~30% in air. The η values increased by 1.5~2.0% when aged for 5 days, and this phenomenon occurs due to aging of the perovskite crystals at room temperature [28,30]. After aging for 60 days, the VOC and FF values increased, and the η increased to 8.77%. The decrease in Rs suggests that the resistance of the perovskite/DPPS layers were reduced by the room-temperature aging. In addition, the PCE values increased up to ~9% for the DPPS-inserted devices after ~1 year, as listed in Table 1.
Figure 4 shows the results of the external quantum efficiencies and the short-circuit current densities calculated from the EQEs. The EQEs of the device with DPPS layer was improved over the standard device without DPPS throughout the range of visible light. Deposition of the extra DPPS layer increased the JSC and EQE values, as shown in Figure 2 and Figure 4, respectively. The double DPPS layers could reduce CH3NH3 desorption and prevent deterioration of the perovskite compounds, while the CH3NH3 vacancies in the crystal formed during heat treatment would be restored by atomic diffusion due to room temperature aging. The DPPS layers would also function as hole transport material instead of spiro-OMeTAD. There are 10 benzene rings in DPPS, which are also present in spiro-OMeTAD and are considered to contribute to hole conduction. The position of the highest occupied molecular orbital due to the benzene rings would be close to the valence band maximum of CH3NH3PbI3 and could function as a hole transport and electron blocking layer in the perovskite solar cells. As shown in Figure 4, compared to the device without DPPS, the EQE in the visible light region could be improved due to efficient hole transport by DPPS. In this study, the perovskite crystals are synthesized at temperatures as high as 190 °C, which would be too high for Spiro-OMeTAD to maintain stability. Unlike spiro-OMeTAD, DPPS is stable up to 300 °C, which is effective in preventing MA desorption, resulting in high durability. Some additives could improve hole and electron transfer in the crystal and suppress the defects [32,33,34,35], and DPPS would also have a similar property.
The maximum power point tracking (MPPT) tests under air mass (AM) 1.5 light irradiation were also performed for the devices, as shown in Figure 5. The DPPS-20 device maintained the maximum output power of 76.7% of the initial value for 600 s, and the DPPS layer had a protective effect.
Figure 6a is an optical microscopy image of the device without DPPS, indicating that perovskite crystals of ~10 μm are dispersed in this thin film. On the other hand, the DPPS-inserted devices have microstructures with interconnected perovskite crystals, as shown in Figure 6b,c, and this microstructural change due to the introduction of DPPS also contributes to the improvement in efficiency.
Figure 7 shows the XRD patterns of the w/o DPPS, DPPS-10, and DPPS-20 cells aged for 351, 448, and 448 days, respectively. XRD reflections are indexed with a cubic structure because of their pseudo-cubic phase [31]. Weak peaks owing to 211 of a tetragonal structure are indicated by 211t. A PbI2 compound is formed for the w/o DPPS cell. On the other hand, the DPPS-inserted cells show that PbI2 almost never forms even after more than a year, which shows that DPPS contributes to high stability.

4. Conclusions

CH3NH3PbI3 photovoltaic devices with DPPS inserted were prepared and characterized. The double DPPS layers between the perovskite crystal and the Au electrodes functioned as a hole transport layer, and the EQE increased throughout the visible light range, which resulted in an increase in photoconversion efficiency. Formation of PbI2 due to MA desorption was suppressed by the introduction of the DPPS layers. The double DPPS layers would allow for effective hole transport for CH3NH3PbI3 photovoltaic devices.

Author Contributions

Conceptualization, K.K. and T.O.; methodology, K.K., T.O. and I.O.; investigation, K.K. and H.S.; resources, A.S., T.T. and S.F.; writing—original draft preparation, K.K. and T.O.; writing—review and editing, K.K., T.O., I.O., H.S., A.S., T.T. and S.F.; supervision, T.O.; project administration, T.O. All authors have read and agreed to the published version of the manuscript.

Funding

This research received no external funding.

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

Data are contained within the article.

Conflicts of Interest

Authors Tomoharu Tachikawa and Sakiko Fukunishi were employed by the company Osaka Gas Chemicals Co., Ltd. The remaining authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

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Figure 1. Schematic illustration of the fabrication process of the perovskite solar cells.
Figure 1. Schematic illustration of the fabrication process of the perovskite solar cells.
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Figure 2. J–V characteristics of (a) fresh perovskite solar cells and (b) aged devices.
Figure 2. J–V characteristics of (a) fresh perovskite solar cells and (b) aged devices.
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Figure 3. Change over time in conversion efficiency of perovskite solar cells.
Figure 3. Change over time in conversion efficiency of perovskite solar cells.
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Figure 4. EQE and JSC of perovskite solar cells.
Figure 4. EQE and JSC of perovskite solar cells.
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Figure 5. Changes of Pmax for the MPPT test.
Figure 5. Changes of Pmax for the MPPT test.
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Figure 6. Optical microscope images of (a) w/o DPPS, (b) DPPS-10, and (c) DPPS-20.
Figure 6. Optical microscope images of (a) w/o DPPS, (b) DPPS-10, and (c) DPPS-20.
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Figure 7. XRD patterns of w/o DPPS, DPPS-10, and DPPS-20 cells.
Figure 7. XRD patterns of w/o DPPS, DPPS-10, and DPPS-20 cells.
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Table 1. Measured photovoltaic parameters of the perovskite photovoltaic devices.
Table 1. Measured photovoltaic parameters of the perovskite photovoltaic devices.
DevicesTime
(Day)
JSC
(mA cm−2)
VOC
(V)
FFRs
(Ω cm2)
Rsh
(Ω cm2)
η
(%)
ηave
(%)
w/o DPPS013.50.2460.2752.2210.910.70
DPPS-10019.80.6580.41416.86485.403.96
DPPS-20020.40.6820.47715.314276.632.88
w/o DPPS137.90.2090.2704.4290.450.37
DPPS-106020.40.7390.5455.45828.226.29
DPPS-206020.40.7590.56611.614508.774.36
w/o DPPS35113.90.2450.2608.3190.8840.621
DPPS-1044821.20.7290.5964.65709.247.02
DPPS-2044820.80.7190.6392.63179.574.29
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MDPI and ACS Style

Kuroyanagi, K.; Oku, T.; Ono, I.; Shimada, H.; Suzuki, A.; Tachikawa, T.; Fukunishi, S. Fabrication and Characterization of CH3NH3PbI3 Perovskite Photovoltaic Devices with Decaphenylcyclopentasilane Hole Transport Layers. Coatings 2025, 15, 253. https://doi.org/10.3390/coatings15030253

AMA Style

Kuroyanagi K, Oku T, Ono I, Shimada H, Suzuki A, Tachikawa T, Fukunishi S. Fabrication and Characterization of CH3NH3PbI3 Perovskite Photovoltaic Devices with Decaphenylcyclopentasilane Hole Transport Layers. Coatings. 2025; 15(3):253. https://doi.org/10.3390/coatings15030253

Chicago/Turabian Style

Kuroyanagi, Keisuke, Takeo Oku, Iori Ono, Haruto Shimada, Atsushi Suzuki, Tomoharu Tachikawa, and Sakiko Fukunishi. 2025. "Fabrication and Characterization of CH3NH3PbI3 Perovskite Photovoltaic Devices with Decaphenylcyclopentasilane Hole Transport Layers" Coatings 15, no. 3: 253. https://doi.org/10.3390/coatings15030253

APA Style

Kuroyanagi, K., Oku, T., Ono, I., Shimada, H., Suzuki, A., Tachikawa, T., & Fukunishi, S. (2025). Fabrication and Characterization of CH3NH3PbI3 Perovskite Photovoltaic Devices with Decaphenylcyclopentasilane Hole Transport Layers. Coatings, 15(3), 253. https://doi.org/10.3390/coatings15030253

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