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Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode

1
Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
2
Machining Technology Group, Singapore Institute of Manufacturing Technology, 73 Nanyang Drive, Singapore 637662, Singapore
3
Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(6), 586; https://doi.org/10.3390/coatings10060586
Received: 28 April 2020 / Revised: 22 June 2020 / Accepted: 22 June 2020 / Published: 24 June 2020
Electrochemical oxidation (ECO) has been used widely to oxidize single crystal Si wafers. Aiming at optimizing the ECO assisted machining methods, the oxidation behaviors of single- crystal silicon (100) wafer under potentiostatic mode are experimentally investigated. It is shown that the Si wafer can be electrochemically oxidized and the oxidized film thickness reaches to 239.6 nanometers in 20 min. The hardness of the oxidized surface is reduced by more than 50 percent of the original surface. The results indicate that the oxide thickness and the hardness can be controlled by changing the voltage. Based on the experimental findings, a hypothesis on the ECO mechanism under potentiostatic mode was proposed to explain the fluctuations of current density under specific applied voltage. The occurrence of the multiple peaks in the current density curve during the oxidation process is due to the formation of discharge channels, which was initiated from the defects at the interface between the oxide bottom and the substrate. This breaks the electrical isolation and leads to the discontinuous growth of the electrochemical oxide layer. The present work contributes to the fundamental understanding of the ECO behaviors for the single-crystal Si (100) wafer under potentiostatic mode. View Full-Text
Keywords: silicon; potentiostatic mode; electrochemical oxidation; oxidation behaviour silicon; potentiostatic mode; electrochemical oxidation; oxidation behaviour
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Guo, W.; Anantharajan, S.K.; Liu, K.; Deng, H. Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode. Coatings 2020, 10, 586.

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