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Open AccessArticle

Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

1
Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Korea
2
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea
3
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Korea
4
Yonsei-KIST Convergence Research Institute, Seoul 02792, Korea
5
Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Korea
*
Authors to whom correspondence should be addressed.
Coatings 2020, 10(6), 572; https://doi.org/10.3390/coatings10060572
Received: 29 May 2020 / Revised: 15 June 2020 / Accepted: 16 June 2020 / Published: 18 June 2020
(This article belongs to the Special Issue Thin Films by Atomic Layer Deposition: Properties and Applications)
The carrier concentration in Bi2Te3-based alloys is a decisive factor in determining their thermoelectric performance. Herein, we propose a novel approach to modulate the carrier concentration via the encapsulation of the alloy precursor powders. Atomic layer deposition (ALD) of ZnO and SnO2 was performed over the Bi2Te2.7Se0.3 powders. After spark plasma sintering at 500 °C for 20 min, the carrier concentration in the ZnO-coated samples decreased, while the carrier concentration in the SnO2-coated samples increased. This trend was more pronounced as the number of ALD cycles increased. This was attributed to the intermixing of the metal ions at the interface. Zn2+ substituted for Bi3+ at the interface acted as an acceptor, while Sn4+ substituted for Bi3+ acted as a donor. This indicates that the carrier concentration can be adjusted depending on the materials deposited with ALD. The use of fine powders changes the carrier concentration more strongly, because the quantity of material deposited increases with the effective surface area. Therefore, the proposed approach would provide opportunities to precisely optimize the carrier concentration for high thermoelectric performance. View Full-Text
Keywords: carrier modulation; atomic layer deposition; Bi2Te3 carrier modulation; atomic layer deposition; Bi2Te3
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MDPI and ACS Style

Lim, S.-S.; Kim, K.-C.; Lee, S.; Park, H.-H.; Baek, S.-H.; Kim, J.-S.; Kim, S.K. Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition. Coatings 2020, 10, 572.

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