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Open AccessArticle

Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering

1
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
2
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(10), 994; https://doi.org/10.3390/coatings10100994
Received: 22 September 2020 / Revised: 10 October 2020 / Accepted: 16 October 2020 / Published: 17 October 2020
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga2O3 at 600 °C can improve the crystal quality of Ga2O3 thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga2O3 at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga2O3 thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO2 layer inserted between Ga2O3 and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications. View Full-Text
Keywords: Ga2O3; MgZnO; dual-band PD; UVB; UVC; voltage-tunable Ga2O3; MgZnO; dual-band PD; UVB; UVC; voltage-tunable
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MDPI and ACS Style

Jheng, J.-S.; Wang, C.-K.; Chiou, Y.-Z.; Chang, S.-P.; Chang, S.-J. Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering. Coatings 2020, 10, 994.

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