Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. The Photo and Dark Current
3.2. Persistent Photoconductivity Effect
3.3. Voltage-Tunable the Central Wavelength of Spectrum
3.4. Extend the Operating Bias Voltage of UVB
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Reference | Type | Responsivity (A/W) | External Quantum Efficiency (EQE) (%) | PDCR | Wavelength of Responsivity (nm) | Voltage-tunable the Central Wavelength of Spectrum |
---|---|---|---|---|---|---|
This work (PD1) | MSM (dual-band) | 1 V:0.14 m (250 nm) 5 V:2.07 m (320 nm) | 1 V:0.07 (250 nm) 5 V:0.8 (320 nm) | 5 V:30.75 | 250 (1 V), 320 (5 V) | Yes |
[38] | MSM (dual-band) | 5 V:11.85 | 5 V:5070 | 5 V:1141 | 300, 350 | No |
[39] | MSM (dual-band) | 35 V:13.1 | – | 20 V:~104 | 325, 365 | No |
[40] | MSM | 5 V:0.1 | 5 V:0.49 | 5 V:2 × 104 | 254 | No |
[41] | PN | 4.27 | 1.97 | 9153 | 254 | No |
[42] | PN | 3 V:88.5 m (238 nm) 3 V:1.24 m (1030 nm) | – | 3 V:740 (238 nm) 3 V:38 (1030 nm) | 238, 1030 | No |
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Jheng, J.-S.; Wang, C.-K.; Chiou, Y.-Z.; Chang, S.-P.; Chang, S.-J. Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering. Coatings 2020, 10, 994. https://doi.org/10.3390/coatings10100994
Jheng J-S, Wang C-K, Chiou Y-Z, Chang S-P, Chang S-J. Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering. Coatings. 2020; 10(10):994. https://doi.org/10.3390/coatings10100994
Chicago/Turabian StyleJheng, Jie-Si, Chun-Kai Wang, Yu-Zung Chiou, Sheng-Po Chang, and Shoou-Jinn Chang. 2020. "Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering" Coatings 10, no. 10: 994. https://doi.org/10.3390/coatings10100994