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Open AccessArticle

X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO2 Films Prepared by Reactive-Ion-Beam Sputtering with Various NH3/O2 Gas Mixture Ratios

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Department of Physics, Fu Jen Catholic University, No.510 Zhongzheng Rd., Xinzhuang Dist., New Taipei City 24205, Taiwan
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Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, No. 510 Zhongzheng Rd., Xinzhuang Dist., New Taipei City 24205, Taiwan
3
Department of Physics, Bradley University, Peoria, IL 61606, USA
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(1), 47; https://doi.org/10.3390/coatings10010047
Received: 4 December 2019 / Revised: 22 December 2019 / Accepted: 2 January 2020 / Published: 4 January 2020
(This article belongs to the Special Issue Coatings Based on Green Materials and Processes)
Nitrogen-doped TiO2 films were prepared by reactive ion-beam sputtering deposition (IBSD) in a mixed atmosphere of NH3 and O2 at a substrate temperature of 400 °C. X-ray photoelectron spectra revealed the presence of six ions, i.e., N3−, N2−, N1−, N+, N2+, and N3+, respectively, in the films. The amorphous films had complex, randomly oriented chemical bonds. The Tauc–Lorentz model was employed to determine the bandgap energy of the amorphous films prepared using different NH3/O2 gas mixing ratios by ellipsometry. In addition, the optical constants of the films were measured. With the increase in the NH3/O2 gas mixture ratio to 3.0, the bandgap of N-doped TiO2 narrowed to ~2.54 eV. View Full-Text
Keywords: nitrogen-doped TiO2; Tauc–Lorentz model; NH3/O2 gas mixture; bandgap narrowing nitrogen-doped TiO2; Tauc–Lorentz model; NH3/O2 gas mixture; bandgap narrowing
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Hsu, J.-C.; Lin, Y.-H.; Wang, P.W. X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO2 Films Prepared by Reactive-Ion-Beam Sputtering with Various NH3/O2 Gas Mixture Ratios. Coatings 2020, 10, 47.

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