Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors
Abstract
:1. Introduction
2. Experimental Section
2.1. Precursor Solution Development and Characterization
2.2. IGZO Film Deposition and Material Characterization
2.3. TFTs/Devices Fabrication and Characterisation
3. Results and Discussion
3.1. Precursor Solutions and Thin Films Characterization
3.2. Electrical Characterization of IGZO Thin Film Transistors (TFTs)
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Year | Fuel | Tmax (°C) | W/L | Dielectric (Technique) | In:Ga:Zn Ratio | µSAT (cm2/Vs) | SS (V/dec) | IOn/IOff | Von (V) | VGS (V) |
---|---|---|---|---|---|---|---|---|---|---|
2008 [11] | No | 450 | 1000/150 | SiNx (PECVD) | 1:1:2 | 0.96 | 1.39 | 106 | ~5 | −15 to 55 |
2009 [12] | 400 | 1000/150 | SiNx (PVD) | 1:1:2 | 0.56 (μef) | 2.81 | 4.6 × 106 | 5 | −30 to 30 | |
3:1:2 | 0.90 (μef) | 1.16 | 3.8 × 106 | ~0 | ||||||
5:1:2 | 1.25 (μef) | 1.05 | 4.1 × 106 | −10 | ||||||
2009 [13] | 400 | 100/50 | SiO2 | 2:1:2 | 2 (μef) | - | 105 | - | −40 to 40 | |
2010 [14] | 400 | 1000/90 | ATO (ALD) | 3:1:1 | 5.8 (μlin) | 0.28 | 6 × 107 | ~0 | −10 to 30 | |
2010 [15] | 500 | 200/20 | SiO2 (Thermal oxidation) | 4:1:5 | 1.13 | 2.5 | - | - | −30 to 40 | |
2010 [7] | 450 | 1000/150 | SiNx | 3:1:2 | 0.86 (μlin) | 0.63 | 106 | ~0 | −30 to 30 | |
2010 [16] | 300 | 1000/100 | SiO2 | 63:10:27 | 0.2 | - | 105 | ~−15 | −40 to 40 | |
2011 [17] | 300 | 500/100 | SiO2 | 5:1:2 | 0.003 | 2.39 | 4.5 × 104 | - | −20 to 30 | |
2013 [18] | 300 | 1000/100 | SiO2 (Thermal oxidation) | 62:5:23 | 1.73 (μef) | 0.32 | 107 | 11 | −10 to 40 | |
2013 [19] | Yes (acac) | 300 | 5000/100 | SiO2 (Thermal Oxidation) | 80:10:10 | 5.43 | - | 108 | - | 0 to 100 |
2019 [20] | 300 | 1000/100 | SiO2 | 10:1:3 | 1.62 | 0.03 | 106 | ~0 | −40 to 80 | |
2019 [3] | No | 350 | n.d./100 | SiO2 | 68:10:22 | 0.72 | 0.68 | 106 | ~0 | −30 to 30 |
This work | Yes (urea) | 300 | 160/20 | AlOx | 3:1:1 | 3.2 | 0.073 | 106 | 0.18 | −1 to 2 |
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Moreira, M.; Carlos, E.; Dias, C.; Deuermeier, J.; Pereira, M.; Barquinha, P.; Branquinho, R.; Martins, R.; Fortunato, E. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors. Nanomaterials 2019, 9, 1273. https://doi.org/10.3390/nano9091273
Moreira M, Carlos E, Dias C, Deuermeier J, Pereira M, Barquinha P, Branquinho R, Martins R, Fortunato E. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors. Nanomaterials. 2019; 9(9):1273. https://doi.org/10.3390/nano9091273
Chicago/Turabian StyleMoreira, Marco, Emanuel Carlos, Carlos Dias, Jonas Deuermeier, Maria Pereira, Pedro Barquinha, Rita Branquinho, Rodrigo Martins, and Elvira Fortunato. 2019. "Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors" Nanomaterials 9, no. 9: 1273. https://doi.org/10.3390/nano9091273