Han, X.; Zhang, H.; Jiang, S.; Zhang, C.; Li, D.; Guo, Q.; Gao, J.; Man, B.
Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. Nanomaterials 2019, 9, 1216.
https://doi.org/10.3390/nano9091216
AMA Style
Han X, Zhang H, Jiang S, Zhang C, Li D, Guo Q, Gao J, Man B.
Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. Nanomaterials. 2019; 9(9):1216.
https://doi.org/10.3390/nano9091216
Chicago/Turabian Style
Han, Xile, Huanian Zhang, Shouzhen Jiang, Chao Zhang, Dengwang Li, Quanxin Guo, Jinjuan Gao, and Baoyuan Man.
2019. "Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser" Nanomaterials 9, no. 9: 1216.
https://doi.org/10.3390/nano9091216
APA Style
Han, X., Zhang, H., Jiang, S., Zhang, C., Li, D., Guo, Q., Gao, J., & Man, B.
(2019). Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. Nanomaterials, 9(9), 1216.
https://doi.org/10.3390/nano9091216